| 摘要 |
A rotation sensor for detecting rotation of an object includes a semiconductor substrate, a vertical Hall element, and a magnetoresistive element. The vertical Hall element is formed in the semiconductor substrate to detect a magnetic field parallel to a surface of the semiconductor substrate. The vertical Hall element outputs a detection signal corresponding to the detected magnetic field. The magnetoresistive element is formed on the surface of the semiconductor substrate and has a resistance value changing with strength of the magnetic field. The magnetoresistive element outputs a resistance signal corresponding to the resistance value. The rotation is detected based on the detection signal and the resistance signal. |
