发明名称 Sintered semiconductor material
摘要 The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.
申请公布号 US8105923(B2) 申请公布日期 2012.01.31
申请号 US20040552548 申请日期 2004.04.09
申请人 STRABONI ALAIN;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITE DE POITIERS 发明人 STRABONI ALAIN
分类号 H01L21/04;H01L31/0236;H01L31/18 主分类号 H01L21/04
代理机构 代理人
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