| 发明名称 |
Enkristall av kiselkarbid och tillverkningsförfarande för densamma |
| 摘要 |
<p>A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2×1019 cm−3 or higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.</p> |
| 申请公布号 |
SE1150726(A1) |
申请公布日期 |
2012.01.31 |
| 申请号 |
SE20110050726 |
申请日期 |
2011.07.29 |
| 申请人 |
DENSO CORPORATION |
发明人 |
FUSAO HIROSE;JUN KOJIMA;KAZUTOSHI KOJIMA;TOMOHISA KATO;AYUMU ADACHI;KOICHI NISHIKAWA |
| 分类号 |
C30B30/00 |
主分类号 |
C30B30/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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