| 摘要 |
A transistor is formed in the active region of a semiconductor substrate. A sidewall structure is disposed on the sidewalls of a gate electrode. A stress control film covers the semiconductor substrate. The sidewall structure includes a first portion extending along partial upper sidewalls of the gate electrode, a second portion extending from partial lower sidewalls of the gate electrode to partial surfaces of the active region, a third portion extending along partial surfaces of the first active region outer than the second portions, and a fourth portion facing the sidewalls of the gate electrode and an upper surface of the active region via the first to third portions. A Young's modulus of the first portion is lower than that of the third portion. The transistor is of an n-type and stress in the stress control film is tensile, or the transistor is of a p-type and stress is compressive. |
