发明名称 |
Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp |
摘要 |
A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm. |
申请公布号 |
US8106419(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20070377522 |
申请日期 |
2007.11.05 |
申请人 |
YOKOYAMA YASUNORI;MIKI HISAYUKI;SHOWA DENKO K.K. |
发明人 |
YOKOYAMA YASUNORI;MIKI HISAYUKI |
分类号 |
H01L33/32;H01L33/06;H01L33/42 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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