发明名称 |
Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout |
摘要 |
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power transistor cells. The separated body regions further provide a function of adjusting a leakage current of said Schottky diode in each of said power transistor cells. Each of the planar Schottky diodes further includes a Shannon implant region disposed in a gap between the separated body regions of two adjacent power transistor cells for further adjusting a leakage current of said Schottky diode. Each of the power transistor cells further includes heavy body doped regions in the separated body regions next to source regions surrounding said Schottky diode forming a junction barrier Schottky (JBS) pocket region. |
申请公布号 |
US8105895(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20110932163 |
申请日期 |
2011.02.17 |
申请人 |
BHALLA ANUP;WANG XIAOBIN;HO MOSES;ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
BHALLA ANUP;WANG XIAOBIN;HO MOSES |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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