发明名称 |
Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate |
摘要 |
A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions. |
申请公布号 |
US8105852(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20100688382 |
申请日期 |
2010.01.15 |
申请人 |
GARDNER NATHAN F.;KRAMES MICHAEL R.;MCLAURIN MELVIN B.;YI SUNGSOO;KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
GARDNER NATHAN F.;KRAMES MICHAEL R.;MCLAURIN MELVIN B.;YI SUNGSOO |
分类号 |
H01L21/00;H01L21/30;H01L21/46 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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