发明名称 |
Magnetoresistive element and magnetic memory |
摘要 |
According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
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申请公布号 |
US8107281(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20100879544 |
申请日期 |
2010.09.10 |
申请人 |
KAI TADASHI;NISHIYAMA KATSUYA;NAGASE TOSHIHIKO;YOSHIKAWA MASATOSHI;KITAGAWA EIJI;DAIBOU TADAOMI;NAGAMINE MAKOTO;NAKAYAMA MASAHIKO;SHIMOMURA NAOHARU;YODA HIROAKI;YAKUSHIJI KEI;YUASA SHINJI;KUBOTA HITOSHI;NAGAHAMA TARO;FUKUSHIMA AKIO;ANDO KOJI;KABUSHIKI KAISHA TOSHIBA;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
KAI TADASHI;NISHIYAMA KATSUYA;NAGASE TOSHIHIKO;YOSHIKAWA MASATOSHI;KITAGAWA EIJI;DAIBOU TADAOMI;NAGAMINE MAKOTO;NAKAYAMA MASAHIKO;SHIMOMURA NAOHARU;YODA HIROAKI;YAKUSHIJI KEI;YUASA SHINJI;KUBOTA HITOSHI;NAGAHAMA TARO;FUKUSHIMA AKIO;ANDO KOJI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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