发明名称 |
Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device |
摘要 |
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.
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申请公布号 |
US8105927(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20100716916 |
申请日期 |
2010.03.03 |
申请人 |
NONAKA KEN-ICHI;HASHIMOTO HIDEKI;YOKOYAMA SEIICHI;IWAKURO HIROAKI;NISHIKAWA KOICHI;SHIMIZU MASAAKI;FUKUDA YUSUKE;HONDA MOTOR CO., LTD.;SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. |
发明人 |
NONAKA KEN-ICHI;HASHIMOTO HIDEKI;YOKOYAMA SEIICHI;IWAKURO HIROAKI;NISHIKAWA KOICHI;SHIMIZU MASAAKI;FUKUDA YUSUKE |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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