| 摘要 |
Provided are a display device in which variation in output characteristics of the photodiode is suppressed, and a method for manufacturing the display device. The display device is provided with the active matrix substrate (2) and photodiode (6). First, on a substrate of glass (12), a silicon film (8) and an interlayer insulation film (15) for covering the silicon film (8) are formed in this order. Then, a metal film is formed, and metal lines (10, 11) traversing the silicon film (8) are formed by etching the metal film. Then, p-type impurity ions are implanted by using a mask that has an opening (24a) that exposes a portion that overlaps a region where a p-layer (9a) is to be formed, a part of the opening (24a) being formed with the metal line (10). Furthermore, n-type impurity ions are implanted by using a mask that has an opening (25b) that exposes a portion that overlaps a region where an n-layer (9c) is to be formed, a part of the opening (25a) being formed with the metal line (11).
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