发明名称 |
Self-aligned graphene transistor |
摘要 |
A graphene field effect transistor includes a gate stack, the gate stack including a seed layer, a gate oxide formed over the seed layer, and a gate metal formed over the gate oxide; an insulating layer; and a graphene sheet displaced between the seed layer and the insulating layer. |
申请公布号 |
US8106383(B2) |
申请公布日期 |
2012.01.31 |
申请号 |
US20090617770 |
申请日期 |
2009.11.13 |
申请人 |
JENKINS KEITH A.;LIN YU-MING;VALDES-GARCIA ALBERTO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JENKINS KEITH A.;LIN YU-MING;VALDES-GARCIA ALBERTO |
分类号 |
H01L29/16;H01L21/04;H01L51/30 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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