发明名称 Method of correcting patterns for semiconductor device
摘要 A method of correcting patterns includes attaining a correcting amount distribution map using a photo mask, the photo mask including a transparent substrate having first and second surfaces opposite to each other and a mask pattern on the first surface, attaining a plurality of shadowing maps based on the correction amount distribution map, each of the shadowing maps including a unit section having a different plane area, and forming a plurality of shadowing regions with shadowing elements in the transparent substrate of the photo mask using respective shadowing maps.
申请公布号 US8105737(B2) 申请公布日期 2012.01.31
申请号 US20100831581 申请日期 2010.07.07
申请人 LEE MYOUNGSOO;KIM BYUNGGOOK;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE MYOUNGSOO;KIM BYUNGGOOK
分类号 G03F9/00 主分类号 G03F9/00
代理机构 代理人
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