| 摘要 |
<p>A mask for sequential lateral solidification (SLS) which is capable of preventing an overlapping region and a diagonal stain based on a crystallization pattern of an active layer. The mask for SLS, which moves in a first direction and selectively transmits a laser beam emitted by a laser emitting device, includes slits which are formed such that the width of a slit in the first direction is smaller than the width of the slit in a second direction, which is perpendicular to the first direction. Each of the slits is tilted by a predetermined angle with respect to the first direction.</p> |
