METHOD OF PROVIDING A FLEXIBLE SEMICONDUCTOR DEVICE AT HIGH TEMPERATURES AND FLEXIBLE SEMICONDUCTOR DEVICE THEREOF
摘要
Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180°C; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.
申请公布号
SG176601(A1)
申请公布日期
2012.01.30
申请号
SG20110086980
申请日期
2010.05.28
申请人
ARIZONA BOARD OF REGENTS, FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY
发明人
O'ROURKE, SHAWN;MOYER, CURTIS;AGENO, SCOTT;BOTTESCH, DIRK;O'BRIEN, BARRY;MARRS, MICHAEL