| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element improved in controllability of resistance change due to a voltage, and a memory device. <P>SOLUTION: A memory element 1 includes a lower electrode 10, a memory layer 20 and an upper electrode 30 which are laminated in this order. The memory layer 20 has a resistance variable layer 22 and an ion source layer 21 exhibiting a value of resistance higher than that in the resistance variable layer 22. Thereby, when a voltage or current pulse is applied, a forming speed of a low resistance part (conduction path) is decreased and the change of the value of resistance in the resistance variable layer is moderated, so that controllability of the value of resistance due to an applied voltage is improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
