发明名称 CHARGED PARTICLE BEAM DEVICE, AND METHOD OF PREPARING SAMPLE
摘要 <P>PROBLEM TO BE SOLVED: To provide a technology capable of removing minimum necessary amount of the damage layer in a sample piece produced by FIB processing. <P>SOLUTION: The charged particle beam device comprises a first element ion beam optical system device performing first FIB processing for forming a sample piece from a sample, a second element ion beam optical system device performing second FIB processing for removing a damage layer formed on the surface of a sample piece, and a first element detector which detects a first element existing in the damage layer. When the amount of the first element existing in the damage layer becomes smaller than a predetermined threshold, end of the second FIB processing is determined. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012018800(A) 申请公布日期 2012.01.26
申请号 JP20100154871 申请日期 2010.07.07
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 NANRI TERUTAKA;ONISHI TAKESHI;TOMIMATSU SATOSHI
分类号 H01J37/317;G01N1/28 主分类号 H01J37/317
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