发明名称 |
Semiconductor Device and Method of Forming Stress Relief Layer Between Die and Interconnect Structure |
摘要 |
A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the conductive pillar. The carrier and adhesive layer are removed. A stress relief insulating layer is formed over the active surface of the semiconductor die and a first surface of the encapsulant. The stress relief insulating layer has a first thickness over the semiconductor die and a second thickness less than the first thickness over the encapsulant. A first interconnect structure is formed over the stress relief insulating layer. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The first and second interconnect structures are electrically connected through the conductive pillar.
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申请公布号 |
US2012018882(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113248312 |
申请日期 |
2011.09.29 |
申请人 |
SHIM IL KWON;CHOW SENG GUAN;LIN YAOJIAN;STATS CHIPPAC, LTD. |
发明人 |
SHIM IL KWON;CHOW SENG GUAN;LIN YAOJIAN |
分类号 |
H01L23/498;H01L23/48 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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