发明名称 |
LIGHT PIPE FABRICATION WITH IMPROVED SENSITIVITY |
摘要 |
In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to etch a first portion of a LP funnel in a dielectric layer of a semiconductor structure using a web etching process, wherein the dielectric layer is above a photodiode region. The process may also be configured to etch a second portion of the LP funnel in the dielectric layer subsequent to the etching of the first portion of the LP funnel, wherein the second portion of the LP funnel is etched below the first portion of the LP funnel using a dry etching process.
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申请公布号 |
US2012018831(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US20100839608 |
申请日期 |
2010.07.20 |
申请人 |
KIM KIHONG;CHEUNG DESMOND;WU YANG;HIMAX IMAGING, INC. |
发明人 |
KIM KIHONG;CHEUNG DESMOND;WU YANG |
分类号 |
H01L31/0232;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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