发明名称 PHOTOMASK HAVING TRANSCRIBING PATTERN AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME
摘要 A photomask for a proximate type exposure apparatus includes: a transparent substrate; and a transcribing pattern and a peripheral region surrounding the transcribing pattern on the transparent substrate, the transcribing pattern having at least one bar including a plurality of discontinuous regions and a plurality of light controlling regions between the two adjacent discontinuous regions, the plurality of discontinuous regions capable of forming at least one continuous photoresist bar by exposing and developing a photoresist material.
申请公布号 US2012021342(A1) 申请公布日期 2012.01.26
申请号 US201113188306 申请日期 2011.07.21
申请人 NOH SO-YOUNG;PARK SEUNG-RYULL;KIM JIN-PIL 发明人 NOH SO-YOUNG;PARK SEUNG-RYULL;KIM JIN-PIL
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
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