发明名称 |
PHOTOMASK HAVING TRANSCRIBING PATTERN AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME |
摘要 |
A photomask for a proximate type exposure apparatus includes: a transparent substrate; and a transcribing pattern and a peripheral region surrounding the transcribing pattern on the transparent substrate, the transcribing pattern having at least one bar including a plurality of discontinuous regions and a plurality of light controlling regions between the two adjacent discontinuous regions, the plurality of discontinuous regions capable of forming at least one continuous photoresist bar by exposing and developing a photoresist material. |
申请公布号 |
US2012021342(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113188306 |
申请日期 |
2011.07.21 |
申请人 |
NOH SO-YOUNG;PARK SEUNG-RYULL;KIM JIN-PIL |
发明人 |
NOH SO-YOUNG;PARK SEUNG-RYULL;KIM JIN-PIL |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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