| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an imaging device, a display image device and electronic equipment, which represent excellent characteristics in a photo detector and a driver element without performing complicated manufacturing processes. <P>SOLUTION: A thickness and impurity density of an I layer 32I (channel region, semiconductor layer) of a photo detector 3 and a thickness and impurity density of an I layer 22I (channel region, semiconductor layer) of a TFT element 2 are nearly identical to each other. An average trap level density of each of the I layers 22I, 32I is 2.0×10<SP POS="POST">17</SP>(cm<SP POS="POST">-3</SP>) and under. Two types of semiconductor layers (I layers 22I, 32I) can be easily formed by the same process. Further, characteristics of both the photo detector 3 and the TFT element 2 can be satisfied at high value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
