| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming the patterns of a semiconductor device to improve the uniformity of a gap between patterns with different widths when forming the patterns in the same layer. <P>SOLUTION: The method of forming patterns of a semiconductor device comprises: forming an auxiliary layer over an underlying layer comprising a cell region and a select transistor region; forming a first passivation layer over the auxiliary layer of the select transistor region; and forming a first photoresist pattern in the first passivation layer on the select transistor region so as to have a narrower width than that of the first passivation layer and second photoresist patterns on the auxiliary layer in the cell region, so as to have a narrower width than that of the first photoresist pattern, in which a gap between the first and second photoresist patterns is identical in width with a gap defined between the second photoresist patterns. <P>COPYRIGHT: (C)2012,JPO&INPIT |
