| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Cu-Ga alloy which can be subjected to rolling processing in spite of a fact that the alloy contains Ga at a concentration as high as 25-30 mass%, since its structure has a specific phase structure and consequently, it hardly causes breakage, cracking or the like, even when it is produced by a casting method, and with which it becomes possible to produce a sputtering target having a high Ga content by rolling, accordingly, and productivity of the sputtering target can be improved, and to provide a Cu-Ga alloy sputtering target whose sputter rate is higher compared with that for a Cu-Ga alloy sputtering target that is produced by a powder sintering method such as hot pressing, when the Cu-Ga alloy is produced by a casting method. <P>SOLUTION: There is provided the Cu-Ga alloy which contains 25-30 mass% of Ga and the balance made up of Cu, and which is characterized in that a γ-phase being the phase having a Ga concentration appearing on a structure image obtained by an electron microscope of 30-35 mass%, has an average equivalent circle diameter of 50 μm or less, and a largest equivalent circle diameter of 200 μm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
