发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a power-supply wiring and a ground wiring capable of suppressing a voltage drop in part of the wiring and migration due to the voltage drop. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate SUB having a principal surface; a power supply sheet-like wiring PPWR spreading in a laminar shape along the principal surface; a ground sheet-like wiring PGND spreading in a laminar shape along the principal surface at a specific distance apart from the power supply sheet-like wiring in a direction crossing the principal surface; a power supply wiring PWR formed on the principal surface and extending in one direction on the principal surface; and a ground wiring GND extending in a direction along the one direction and formed on the principal surface at a specific distance apart from the power supply wiring PWR. The power supply sheet-like wiring PPWR is electrically connected to the power supply wiring PWR, and the ground sheet-like wiring PGND is electrically connected to the ground wiring GND. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012019063(A) 申请公布日期 2012.01.26
申请号 JP20100155408 申请日期 2010.07.08
申请人 RENESAS ELECTRONICS CORP 发明人 SHIROTA HIROSHI;SHIGEMITSU YASUNARI;HISAMURA KAZUNORI
分类号 H01L27/04;H01L21/82;H01L21/822;H01L23/12 主分类号 H01L27/04
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