| 摘要 |
A semiconductor structure and a manufacture method thereof are disclosed. The semiconductor structure includes a semiconductor wafer having a plurality of semiconductor device dies, wherein each of the semiconductor device dies includes a die body, a metal wiring layer, a bump, and a metal layer. The metal wiring layer is formed on the die body while the bump is formed on the metal wiring layer during the semiconductor front-end-of-line (FEOL) process and protrudes from the die body. The metal layer is disposed on one side of the bump opposite to the metal wiring layer, wherein the activity of the metal layer is smaller than the activity of the bump. In this way, the semiconductor structure of the present invention is easy to be manufactured and the manufacture cost is also reduced.
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