<p>Disclosed is a voltage sensitive resistor (VSR) write once (WO) read only memory (ROM) device which includes a semiconductor device and a VSR connected, to die semiconductor device. The VSR WO ROM device is a write once read only device. The VSR includes a CVD titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by an order of 102, more preferably 103 and most preferably 104 when a predetermined voltage and current are applied to the VSR. A plurality of the VSR WO ROM devices may be arranged to form a high density programmable logic circuit in a 3-D stack. Also disclosed are methods to form the VSR WO ROM device.</p>
申请公布号
WO2012012070(A1)
申请公布日期
2012.01.26
申请号
WO2011US41273
申请日期
2011.06.21
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
KANE, TERENCE, L.;WANG, YUN-YU;WONG, KEITH KWONG, HON