| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can reduce an operating voltage without damaging an active layer. <P>SOLUTION: The semiconductor light emitting element comprises an n-type layer of a III-V semiconductor, an active layer of a III-V semiconductor provided on the n-type layer, a p-type first layer of a III-V semiconductor provided on the active layer, a p-type contact layer of a III-V semiconductor provided on the p-type first layer, and an uneven layer provided between the p-type first layer and the p-type contact layer and having an uneven top face. The uneven layer has a III-V semiconductor containing at least In and Al with a p-type impurity density lower than that of the p-type contact layer. The top face of the p-type contact layer has an uneven shape inherited from the uneven shape of the uneven top face. <P>COPYRIGHT: (C)2012,JPO&INPIT |
