MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND PROCESS FOR FORMING SILICON-CONTAINING THIN FILM USING SAME

摘要

A material for chemical vapor deposition containing an organic silicon-containing compound represented by formula: HSiCl(NR1R2)(NR3R4), wherein R1 and R3 each represent C1-C4 alkyl or hydrogen; and R2 and R4 each represent C1-C4 alkyl. The material is particularly suitable as a material for forming a silicon nitride thin film on a substrate by chemical vapor deposition. The use of the material allows for film formation at low temperatures ranging from 300° to 500° C.