发明名称 |
PHOTOELECTROCHEMICAL ETCHING OF P-TYPE SEMICONDUCTOR HETEROSTRUCTURES |
摘要 |
A method for photoelectrochemical (PEC) etching of a p-type semiconductor layer simply and efficiently, by providing a driving force for holes to move towards a surface of a p-type cap layer to be etched, wherein the p-type cap layer is on a heterostructure and the heterostructure provides the driving force from an internal bias generated internally in the heterostructure; generating electron-hole pairs in a separate area of the heterostructure than the surface to be etched; and using an etchant solution to etch the surface of the p-type layer. |
申请公布号 |
US2012018853(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113247866 |
申请日期 |
2011.09.28 |
申请人 |
TAMBOLI ADELE;HU EVELYN LYNN;SCHMIDT MATHEW C.;NAKAMURA SHUJI;DENBAARS STEVEN P.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
TAMBOLI ADELE;HU EVELYN LYNN;SCHMIDT MATHEW C.;NAKAMURA SHUJI;DENBAARS STEVEN P. |
分类号 |
H01L29/06;H01L21/306 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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