发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes implanting indium into a first region of a semiconductor substrate; forming a first gate insulation film having a first film thickness in the first region and a second region different from the first region after the implanting; removing the first gate insulation film from the first region; applying heat treatment to the semiconductor substrate after the forming; and forming a second gate insulation film having a second film thickness on the first region after the applying. In the method, a temperature falling rate of the heat treatment in the applying is 20° C. per second or higher. |
申请公布号 |
US2012021593(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113160460 |
申请日期 |
2011.06.14 |
申请人 |
HORI MITSUAKI;YOSHIZAWA KAZUTAKA;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
HORI MITSUAKI;YOSHIZAWA KAZUTAKA |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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