发明名称 |
DEVICE AND PROCESS FOR FORMING, ON A NANOWIRE MADE OF A SEMICONDUCTOR, AN ALLOY OF THIS SEMICONDUCTOR WITH A METAL OR METALLOID |
摘要 |
<p>Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.</p> |
申请公布号 |
WO2012010473(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
WO2011EP61924 |
申请日期 |
2011.07.13 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;MONGILLO, MASSIMO;DE FRANCESCHI, SILVANO;SPATHIS, PANAYOTIS |
发明人 |
MONGILLO, MASSIMO;DE FRANCESCHI, SILVANO;SPATHIS, PANAYOTIS |
分类号 |
H01L21/335;H01L29/06;H01L29/08;H01L29/45;H01L29/775 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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