SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要
<p>Provided is a semiconductor device which is capable of reducing leakage current even in cases where the transistor area is decreased. A semiconductor device (1) of the present invention comprises: a p-type semiconductor substrate (10); a first n-type collector diffusion layer (21) that is formed in the p-type semiconductor substrate (10); a deep trench (11) that is formed in the p-type semiconductor substrate (10) so as to surround the first n-type collector diffusion layer (21); a p-type channel stopper layer (30) that is formed below the deep trench (11); and an n-type diffusion layer (50) that is formed between the side wall of the deep trench (11) and the first n-type collector diffusion layer (21).</p>
