| 发明名称 |
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor device and a method for manufacturing the same. <P>SOLUTION: The nitride-based semiconductor device includes: a base substrate 110 having a diode structure; an epitaxial growth film 120 disposed on the base substrate 110; and an electrode part 140 disposed on the epitaxial growth film 120. The diode structure includes: first-type semiconductor layers 112; and a second-type semiconductor layer 114 which is disposed in the center of the first-type semiconductor layers 112. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012019186(A) |
申请公布日期 |
2012.01.26 |
| 申请号 |
JP20100264722 |
申请日期 |
2010.11.29 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO LTD |
发明人 |
JOHN WU-CHOL;PARK KI-YOL;YI CHON-HEE;PARK YON-HWAN |
| 分类号 |
H01L29/861;H01L21/338;H01L21/8232;H01L27/06;H01L27/095;H01L29/47;H01L29/778;H01L29/812;H01L29/872 |
主分类号 |
H01L29/861 |
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