| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a MIS structure using a HK insulating film as a gate insulating film, which can prevent the degradation of transistor characteristics caused by generation of an excessive oxygen area near an edge of the HK insulating film. <P>SOLUTION: Gate electrodes 109a, 109b are formed on a semiconductor substrate 100 via gate insulating films 108a, 108b. Side wall spacers 111a, 111b consisting of a conductive oxide are formed on sides of gate electrodes 109a, 109b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
