| 摘要 |
In one embodiment, a nonvolatile semiconductor storage device includes a plurality of memory cells, and a setting part in which a setting value for prescribing a relation between a program voltage to be applied to the memory cells and a loop number of application processes of the program voltage is set to change the program voltage according to the loop number. The device further includes a voltage controller configured to program data into the memory cells by applying the program voltage depending on the loop number to the memory cells, using the setting value. The device further includes a counter configured to count a maximum value or an average value of final loop numbers in the memory cells, where the final loop numbers are loop numbers in the respective memory cells at time when data programming is completed. The device further includes a setting change part configured to, in response to a change of the counted maximum value or average value from a predetermined maximum value or average value, perform a setting process for canceling the change of the maximum value or average value. |
