| 摘要 |
A solid-state imaging device includes: a pixel section in which pixels performing photoelectric conversion are arranged in a matrix shape; and a pixel signal reading section that has an AD conversion section which reads pixel signals through pixel units from the pixel section and performs analog digital (AD) conversion. The pixel signal reading section includes comparators each of which compares a reference signal, which is a ramp wave, with read analog signal potentials of pixels in a corresponding column, counter latches each of which is disposed to correspond to each of the comparators, is able to count a comparison time of the corresponding comparator, stops the count when an output of the corresponding comparator is inverted, and retains a corresponding count value, and an adjustment section that performs offset adjustment on the reference signal for each row on which the AD conversion is performed. |
