| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a size and on-resistance in a high frequency amplifying MOSFET having a drain offset region. <P>SOLUTION: Conductor plugs 13 (p1) for leading out electrodes are provided on a source region 10, a drain region 9, and a leach-through layer 3 (4). First layer wires 11s, 11d (M1) are respectively connected to the conductor plugs 13 (p1), and further second layer wires 12s, 12d (M2) for backing are connected to the first layer wires 11s, 11d (M1), on the conductor plugs 13 (p1). <P>COPYRIGHT: (C)2012,JPO&INPIT |
