发明名称 MEMORY UNIT THAT REALIZES CIRCUIT AREA SAVINGS
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory unit that realizes circuit area savings. <P>SOLUTION: In a memory unit that realizes circuit area savings: a first transistor is connected to a read line and controlled by a word line; a second transistor is connected between the first transistor and a power supply end; a third transistor is connected to the second transistor, controlled by a bit line, and controls continuity/non-continuity of the second transistor; and a fourth transistor is connected to the third transistor and a write line, and controlled by the word line. Thus, the memory unit can be configured using the four transistors, achieving the purpose of circuit area savings. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012018745(A) 申请公布日期 2012.01.26
申请号 JP20110046560 申请日期 2011.03.03
申请人 SITRONIX TECHNOLOGY CORP 发明人 LIAO MIN-NAN
分类号 G11C11/405 主分类号 G11C11/405
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