| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent breakdown voltage performance with a low-potential area and high-potential wiring not being crossed. <P>SOLUTION: The semiconductor device of the present invention comprises: a logic circuit (501); a low-potential side drive circuit (502) for driving a low-potential side power element in response to a control signal from the logic circuit; a high-potential side drive circuit (505) to which a control signal from the logic circuit is input via a level shift circuit for driving a high-potential side power element (506); and a multiple trench separation region (508) for separating a high-potential island including the high-potential side power element by a multiply overlapped trench separation region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
