| 摘要 |
<P>PROBLEM TO BE SOLVED: To minimize decrease in breakdown voltage or increase in leakage current caused by crystal defects of an impurity layer at the tips of a trench constituting a super junction structure. <P>SOLUTION: Both tips in the longitudinal direction of a trench 2a constituting a super junction structure are removed by a trench 13 to obtain a structure where an insulating member 15 is arranged. Such a structure as crystal defects formed at both tips in the longitudinal direction of the trench 2a are removed is thereby brought about when the trench 2a is filled with a p-type region 3. Consequently, generation of a leakage current through the crystal defects can be minimized, resulting in a semiconductor device where decrease in breakdown voltage or increase in leakage current caused by crystal defects can be minimized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
