发明名称 |
Semiconductor Device and Method of Forming RDL Wider than Contact Pad along First Axis and Narrower than Contact Pad Along Second Axis |
摘要 |
A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
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申请公布号 |
US2012018904(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113181290 |
申请日期 |
2011.07.12 |
申请人 |
LIN YAOJIAN;FENG XIA;FANG JIANMIN;CHEN KANG;STATS CHIPPAC, LTD. |
发明人 |
LIN YAOJIAN;FENG XIA;FANG JIANMIN;CHEN KANG |
分类号 |
H01L29/40;H01L21/283 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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