发明名称 |
GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate includes a first surface and a second surface opposite to the first surface, and the first surface defines a number of grooves therein. The filler is filled into the number of grooves on the first surface of the silicon substrate. A thermal expansion coefficient of the filler is bigger than that of the silicon substrate. The gallium nitride layer is formed on the second surface of the silicon substrate. |
申请公布号 |
US2012018847(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113013825 |
申请日期 |
2011.01.26 |
申请人 |
TU PO-MIN;HUANG SHIH-CHENG;YANG SHUN-KUEI;HUANG CHIA-HUNG;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
TU PO-MIN;HUANG SHIH-CHENG;YANG SHUN-KUEI;HUANG CHIA-HUNG |
分类号 |
H01L29/20;H01L21/20;H01L29/06 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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