发明名称 |
Non-Volatile Memory Element And Memory Device Including The Same |
摘要 |
Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level. |
申请公布号 |
US2012018695(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113114497 |
申请日期 |
2011.05.24 |
申请人 |
LEE DONG-SOO;CHANG MAN;KIM YOUNG-BAE;LEE MYOUNG-JAE;LEE CHANG-BUM;LEE SEUNG-RYUL;KIM CHANG-JUNG;HUR JI-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG-SOO;CHANG MAN;KIM YOUNG-BAE;LEE MYOUNG-JAE;LEE CHANG-BUM;LEE SEUNG-RYUL;KIM CHANG-JUNG;HUR JI-HYUN |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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