发明名称 |
ION DOPING APPARATUS AND METHOD OF REDUCING DUST IN ION DOPING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ion doping apparatus that can drastically reduce the frequency of atmosphere opening treatment and cleaning treatment of an ion source and a doping chamber for removing particles generated due to hydrogen embrittlement of an inner wall, and to provide a method of reducing dust in the ion doping apparatus. <P>SOLUTION: A film of dichromium trioxide (Cr<SB POS="POST">2</SB>O<SB POS="POST">3</SB>) is formed on inner walls of an ion source and a doping chamber by supplying an element hydrogen and an element oxygen to the ion source and the doping chamber at 600°C or more and 1000°C or less. This can repair and reinforce the inner walls before the progress of the hydrogen embrittlement to provide a doping apparatus which minimizes a frequency of atmosphere opening. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012018920(A) |
申请公布日期 |
2012.01.26 |
申请号 |
JP20110129079 |
申请日期 |
2011.06.09 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SUZUKI NAOKI |
分类号 |
H01J37/317;C23C14/48;H01L21/265 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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