| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of suppressing a noise. <P>SOLUTION: A pixel 11 comprises a reset transistor 117, a selection transistor 115, an amplifier transistor 113 and a photoelectric conversion part 111, the photoelectric conversion part 111 comprises a photoelectric conversion film 45 for photoelectric-converting, a pixel electrode 46 formed on a surface of a semiconductor substrate side of the photoelectric conversion film, and a transparent electrode 47 formed on a surface opposing to the pixel electrode of the photoelectric conversion film, and an amplitude of a row reset signal applied to a gate of the reset transistor 117 is smaller than that of at least one among (a) a maximum voltage applied to a drain of an amplifier transistor, (b) a maximum voltage applied to a gate of a selection transistor, (c) a source voltage applied to an inversion amplifier, and (d) a maximum voltage applied to a transparent electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
