| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method for forming a tapered wiring, which has a large selective ratio with respect to a base. <P>SOLUTION: A wiring with a taper angle of 60° or less is formed by forming a film of a conduction material on a substrate and dry-etching the film of the conduction material with an ICP etching apparatus. Likewise, a gate wiring with a taper angle of 60° or less is formed by forming a film of a conduction material on a substrate and dry-etching the film of the conduction material with an ICP etching apparatus. Then, a gate insulation film is formed on the gate wiring, and an active layer is formed on the gate insulation film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
