发明名称 POWER SUPPLIES IN FLASH MEMORY DEVICES AND SYSTEMS
摘要 Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level.
申请公布号 US2012020168(A1) 申请公布日期 2012.01.26
申请号 US201113249744 申请日期 2011.09.30
申请人 PYEON HONG BEOM;KIM JIN-KI;MOSAID TECHNOLOGIES INCORPORATED 发明人 PYEON HONG BEOM;KIM JIN-KI
分类号 G11C16/30;G11C16/04 主分类号 G11C16/30
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