| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separate processing region of a semiconductor film with insulation resin, and provide a manufacturing method of the photoelectric conversion device. <P>SOLUTION: A photoelectric conversion device comprises a first conduction layer formed on a substrate, first, second, and third semiconductor layers formed on the first conduction layer, a second conduction layer formed on the third semiconductor layer, a first separation groove for separating into plural pieces the first conduction layer and the first, second, and third semiconductor layers, a second separation groove for separating into plural pieces the first, second, and third semiconductor layers, and a third separation groove for separating into plural pieces the second conduction layer. A structure defect existing in at least one of the first, second, and third semiconductor layers, and the first separation groove are filled with insulation resin. <P>COPYRIGHT: (C)2012,JPO&INPIT |
