| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state image sensor and an imaging system which reduces substantial capacitance value of a charge voltage conversion part in each pixel forming a pixel array. <P>SOLUTION: The solid-state image sensor has a pixel array with a plurality of pixels arranged to form a plurality of rows and a plurality of columns. The pixel array has a conductor maintained at a fixed potential. Each pixel includes a photoelectric conversion element, a charge voltage conversion part for converting charge generated at the photoelectric conversion element to a voltage, and an amplification part for amplifying the voltage at the charge voltage conversion part by a positive gain and outputting the amplified signal to an output line. The output line has a shielding part arranged to shield at least a part of the charge voltage conversion part from the conductor. <P>COPYRIGHT: (C)2012,JPO&INPIT |
