发明名称 |
SELECTIVE FABRICATION OF HIGH-CAPACITANCE INSULATOR FOR A METAL-OXIDE-METAL CAPACITOR |
摘要 |
<p>Methods and devices of a capacitor in a semiconductor device having an increased capacitance are disclosed. In a particular embodiment, a method of forming a capacitor is disclosed. A section of a first insulating material between a first metal contact element and a second metal contact element is removed to form a channel. A second insulating material is deposited in the channel between the first metal contact element and the second metal contact element.</p> |
申请公布号 |
EP2409330(A2) |
申请公布日期 |
2012.01.25 |
申请号 |
EP20100753969 |
申请日期 |
2010.03.16 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
KANG, WOO, TAG;KIM, JONGHAE;SUH, JUNGWON |
分类号 |
H01L27/08;G06F17/50;H01L49/02 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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