Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method

摘要

A method for fabricating a high light extraction photonic device is disclosed. A lift-off layer is grown on a substrate. An epitaxial semiconductor device structure is grown on the lift-off layer such that the lift-off layer is sandwiched between the device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate are flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and the lift-off layer. At least a portion of the lift-off layer is removed to separate the substrate from the device structure.